Introduction
Low-temperature in-situ STM-ARPES experimental station consists of STM, ARPES, OMBE, and LMBE, which are interconnected by an ultra-high-vacuum pipe. The function of this experimental station is epitaxial growth of single-crystal films and in-situ measurements of electronic structures in real/momentum space.
Parameter
| STM | |
| Type | Unisoku 1300 |
| Controller | NanoisTMSPM control system |
| Temperature | 0.3 K~300 K |
| Maximum field | 16 T |
| Energy resolution | 0.3 meV |
| Space resolution (z) | 0.1 Å |
| ARPES | |
| Light source | He and Kr |
| Sample manipulator | Six-axis |
| Analyzer | DA 30-L |
| Temperature range | 4.2 K-300 K |
| Energy resolution | 3 meV |
| OMBE | |
| Substrate temperature | ≥ 1000 ℃ |
| Gas | Ozone |
| RHEED | One stage differential pumping |
| LMBE | |
| Substrate temperature | ≥ 1000 ℃ |
| Gas | Oxygen and Ozone |
| RHEED | Two stage differential pumping |
| Laser | KrF Excimer Laser and Solid-state Laser |
| UHV Interacting Pipe | |
| UHV | <3*10-10 Torr |
Contact
Jiali Zhao, E-mail: zhaojiali@iphy.ac.cn
