Soft-X ray interference lithography (XIL) is a newly developed technique for production of periodic nano-structures with resolution below 100 nm. The technique is based on coherent radiation obtained from undulators at synchrotron radiation (85-150 eV). Because of its small wavelength (typical value: 13.4 nm) and practical absence of the proximity effect, high density resolution lines/dots with high density can be afforded. The throughput of this parallel exposing method is much higher than that of the serial electron-beam lithography. Interference schemes based on diffraction (gratings) optics have been constructed at BL08U1-B beamline in SSRF. Both one-dimensional and two-dimensional patterns such as arrays of dots have been achieved. XIL is used in a growing number of applications; examples include fabrication of self-assembly templates, magnetic nano-dot arrays and nano-optical components.